SMD компоненты. Код W6 ... Y80 (корпус SOT23, TO-23)
Код |
Типономинал |
Фирма |
Функ ция |
Особенности |
Цоколевка |
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1 |
2 |
3 |
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W6 |
BZX84C3V3 |
CENTS |
DZ |
VZ(IZT=5MA)=3.1...3.5B; IL(VR =1.0B)<5.0мкА; ZZT(IZT=5MA)<95OM; IZM<76мА |
A |
nc |
K |
W7 |
BZX84C3V6 |
CENTS |
DZ |
VZ(IZT=5MA)=3.4...3.8B; IL(VR =1.0B)<5.0мкА; ZZT(IZT=5MA)<90OM; IZM<69мА |
A |
nc |
K |
W74 |
BAW74 |
ZETEX |
2xDI |
VR<50B; IF<150MA;VF(IF =100MA)<1.0B; IR<0.1мкА; CD<2.0пФ; tRR<4нc |
A1 |
A2 |
K1 K2 |
W8 |
BZX84C3V9 |
CENTS |
DZ |
VZ(IZT=5MA)=3.7...4.1B; IL(VR =1.0B)<3.0мкА; ZZT(IZT=5MA)<90OM; IZM<64мА |
A |
nc |
K |
W9 |
BZX84C4V3 |
CENTS |
DZ |
VZ(IZT=5MA)=4.0...4.6B; IL(VR =1.0B)<3.0мкА; ZZT(IZT=5MA)<90OM; IZM<58мА |
A |
nc |
K |
WCs |
BCR133 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>30; fT>130МГц |
B |
E |
C |
WDs |
BCR141 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>50; fT>130МГц |
B |
E |
C |
Wes |
BCR148 |
SIEM |
D-NPN |
VCB0=50B;IC=70MA; PD=200мВт; h21>70; fT>100МГц |
B |
E |
C |
WFs |
BCR112 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>20; fT>140МГц |
B |
E |
C |
WGs |
BCR116 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>70; fT>160МГц |
B |
E |
C |
WHs |
BCR108 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>70; fT>170МГц |
B |
E |
C |
Wis |
BCR158 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>70; fT>200МГц |
B |
E |
C |
WJs |
BCR135 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>70; fT>150МГц |
B |
E |
C |
WKs |
BCR119 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21=120...630; fT>150МГц |
B |
E |
C |
WLs |
BCR146 |
SIEM |
D-NPN |
VCB0=50B;IC=70MA; PD=200мВт; h21>50; fT>150МГц |
B |
E |
C |
WMs |
BCR183 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>30; fT>200МГц |
B |
E |
C |
WNs |
BCR185 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>70; fT>200МГц |
B |
E |
C |
WOs |
BCR191 |
SIEM |
D-NPN |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>50; fT>200МГц |
B |
E |
C |
WRs |
BCR198 |
SIEM |
D-PNP |
VCB0=-50B;IC=-70MA; PD=200мВт; h21>70; fT>190МГц |
B |
E |
C |
WSs |
BCR169 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21=120...630; fT>200МГц |
B |
E |
C |
WTs |
BCR166 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>70; fT>160МГц |
B |
E |
C |
WUs |
BCR162 |
SIEM |
D-PNP |
VCB0=-50B;IC=-100MA; PD=200мВт; h21>20; fT>200МГц |
B |
E |
C |
WVs |
BCR129 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21=120...630; fT>150МГц |
B |
E |
C |
WW7 |
CMPZDA3V6 |
CENTS |
2xDZ |
VZ(IZT=5.0MA)=3.4...3.8B; IL(VR =1.0B)<2.0мкА; ZZT(IZT=5.0MA)<95OM; IZM=45мА |
K2 |
K1 |
A2 A1 |
WW8 |
CMPZDA3V9 |
CENTS |
2xDZ |
VZ(IZT=5.0MA)=3.7...4.1B; IL(VR =1.0B)<2.0мкА; ZZT(IZT=5.0MA)<90OM; IZM=43мА |
K2 |
K1 |
A2 A1 |
WW9 |
CMPZDA4V3 |
CENTS |
2xDZ |
VZ(IZT=5.0MA)=4.0...4.6B; IL(VR =1.0B)<1.0мкА; ZZT(IZT=5.0MA)<9OM; IZM=40мА |
K2 |
K1 |
A2 A1 |
WXs |
BCR196 |
SIEM |
D-PNP |
VCB0=-50B;IC=-70MA; PD=200мВт; h21>50; fT>150МГц |
B |
E |
C |
WZs |
BCR142 |
SIEM |
D-NPN |
VCB0=50B;IC=100MA; PD=200мВт; h21>70; fT>150МГц |
B |
E |
C |
X1s |
BFT93 |
SIEM |
D-PNP |
VCB0=-15B;IC=-35MA; PD=300мВт; h21>20; fT>5500МГц |
B |
E |
C |
XAs |
BCR503 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>40; fT>100МГц |
B |
E |
C |
XBs |
BCR553 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>40; fT>150МГц |
B |
E |
C |
XCs |
BCR533 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>70; fT>100МГц |
B |
E |
C |
XDs |
BCR555 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>70; fT>150МГц |
B |
E |
C |
XFs |
BCR512 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>60; fT>100МГц |
B |
E |
C |
XGs |
BCR523 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>70; fT>100МГц |
B |
E |
C |
XHs |
BCR573 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>70; fT>150МГц |
B |
E |
C |
XKs |
BCR519 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21=120...630; fT>100МГц |
B |
E |
C |
XLs |
BCR569 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21=120...630; fT>150МГц |
B |
E |
C |
XMs |
BCR583 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>70; fT>150МГц |
B |
E |
C |
XUs |
BCR562 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>60; fT>150МГц |
B |
E |
C |
XVs |
BCR521 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>20; fT>100МГц |
B |
E |
C |
XWs |
BCR505 |
SIEM |
D-NPN |
VCB0=50B;IC=500MA; PD=330мВт; h21>70; fT>100МГц |
B |
E |
C |
XXs |
BCR571 |
SIEM |
D-PNP |
VCB0=-50B;IC=-500MA; PD=330мВт; h21>20; fT>150МГц |
B |
E |
C |
Y1 |
BZX84C11 |
ALLEG |
DZ |
VZ(IZT=5MA)=10.4...11.6B; IL(VR=8.0B)<0.1мкА; ZZT(IZT=5MA)<20OM |
A |
nc |
K |
Y1 |
BZX84C11 |
CENTS |
DZ |
VZ(IZT=5MA)=10.4...11.6B; IL(VR=8.0B)<0.1мкА; ZZT(IZT=5MA)<20OM; IZM<23мА |
A |
nc |
K |
Y1 |
BZX84C11 |
VISH |
DZ |
VZ(IZT=5MA)=10.4...11.6B; ZZT(IZ=5MA)<20OM |
A |
nc |
K |
Y10 |
BZX84C27 |
ALLEG |
DZ |
VZ(IZT=2MA)=25.1...28.9B; IL(VR=21.0B)<0.05мкА; ZZT(IZT=2MA)<80OM |
A |
nc |
K |
Y10 |
BZX84C27 |
CENTS |
DZ |
VZ(IZT=2MA)=25.1...28.9B; IL(VR=18.9B)<0.05мкА; ZZT(IZT=2MA)<80OM; IZM<9мА |
A |
nc |
K |
Y10 |
BZX84-C27 |
PHIL |
DZ |
VZ(IZT=2MA)=25.1...28.9B; IL(VR=18.9B)<50нА; ZZT(IZT=2.0MA)<80OM; IZM=200мА |
A |
nc |
K |
Y10 |
BZX84C27 |
VISH |
DZ |
VZ(IZT=2MA)= 25.1...28.9B; ZZT(IZ=2MA)<80OM |
A |
nc |
K |
Y11 |
BZX84C30 |
ALLEG |
DZ |
VZ(IZT=2MA)=28.0...32.0B; IL(VR=18.9B)<0.05мкА; ZZT(IZT=2MA)<80OM |
A |
nc |
K |
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